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PD - 9.1275
PRELIMINARY
IRL2310
HEXFET (R) Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.5V & 10V 175C Operating Temperature Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
VDSS = 100V RDS(on) = 0.040 ID = 40A
Absolute Maximum Ratings
Parameter
ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
40 29 160 170 1.1 20 500 24 17 5.5 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.50 ----
Max.
0.90 ---- 62
Units
C/W
Revision 1
IRL2310
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 100 --- --- --- 1.0 18 --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.040 VGS = 10V, I D = 24A 0.050 VGS = 4.5V, I D = 20A 2.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 24A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 160 ID = 24A 13 nC VDS = 80V 45 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V ns --- ID = 24A --- RG = 5.0 --- RD = 2.0, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact --- 3200 --- VGS = 0V --- 610 --- pF VDS = 25V --- 140 --- = 1.0MHz, See Fig. 5
Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- --- 6.6 38 140 84
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 180 0.98 40 A 160 1.6 270 1.5 V ns C
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 24A, V GS = 0V TJ = 25C, I F = 24A di/dt = 100A/s
S+LD)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25C, L = 540 H R G = 25, IAS = 24A. (See Figure 12) ISD 24A, di/dt 170A/s, V DD V(BR)DSS, T J 175C Pulse width 300s; duty cycle 2%.
IRL2310
Peak Diode Recovery dv/dt Test Circuit
D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
RG
* * * *
dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFL2310
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M
A
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER IRF1010 9246 9B 1M
DATE CODE (YYWW) YY = YEAR WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice.

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